Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2
نویسندگان
چکیده
منابع مشابه
Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy
The surface roughness of gallium arsenide ~001! films produced by metalorganic vapor-phase epitaxy has been studied as a function of temperature and growth rate by in situ scanning tunneling microscopy. Height–height correlation analysis reveals that the root-mean-height difference follows a power-law dependence on lateral separation, i.e., G(L)5kL, up to a critical distance Lc , after which it...
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The growth of pseudomorphically strained GaAs1 ySby layers with high Sb-mole fractions of yX0.35 are desired on GaAs substrates for making lasers and detectors in the mid-infrared range. The effect of gas-phase precursor chemistry on the strained-layer Sbincorporation efficiency in metalorganic vapor phase epitaxy (MOVPE) was determined using four combinations of ethyland methylGa and Sb precur...
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Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure con...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2017
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-017-5937-3